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TSMC to start using High-NA EUV lithography in 2030 — A10 or A11 technology prime candidates for use
TSMC discloses plans to use High-NA EUV lithography in 2030, 6×12-inch photomasks with new scanners in 2033.
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TSMC discloses plans to use High-NA EUV lithography in 2030, 6×12-inch photomasks with new scanners in 2033.
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